Accession Number:
ADP013298
Title:
Linearly-Polarized Optical Transitions at Type-II Interfaces in the Tight-Binding Approach
Descriptive Note:
Conference proceedings
Corporate Author:
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Personal Author(s):
Report Date:
2001-06-01
Pagination or Media Count:
4.0
Abstract:
The sp3 tight-binding method has been applied to calculate the in-plane anisontropy of optical matrix elements for indirect electron-hole radiative recombination at a type-II interface. It has been shown that in type-II heterostructures with large band off-sets the linear polarization of the photoluminescence vary in a wide range including values 100 as a function of the tight-binding parameters characterizing the interface cations and anions. The behaviour of electron and hole quantum-confined states near the interface and their overlap has been analyzed as well.
Descriptors:
Subject Categories:
- Solid State Physics