Accession Number:

ADP013287

Title:

A Comparative Study of QD and Nitrogen-Based 1.3 mu m VCSELs

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

We study two types of GaAs-based heterostructures InAsInGaAs quantum dots and InGaAsN quantum wells designed for 1.3 micrometers vertical-cavity surface-emitting lasers VCSELs and compare different device designs. A correlation between properties of the active region and parameters of the optical microcavity required for lasing was found and investigated. The comparative analysis of the vertical-cavity surface-emitting lasers with either InAsInGaAs quantum dots or InGaAsN quantum wells active region operating in continuous wave regime at room temperature was done. Optimization of the optical microcavity provides the internal round-trip optical loss less than 0.05.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE