Persistent Photoconductivity in P-Type Al0.5Ga0.5/GaAs/Al0.5Ga0.5As Heterostructures
HUMBOLDT-UNIVERSITY BERLIN (GERMANY) DEPT OF PHYSICS
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Illumination of a double p - Al0.5Ga0.5AsGaAsAl0.5Ga0.5As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a framework of the model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface.
- Electrooptical and Optoelectronic Devices
- Solid State Physics