Accession Number:

ADP013282

Title:

Persistent Photoconductivity in P-Type Al0.5Ga0.5/GaAs/Al0.5Ga0.5As Heterostructures

Descriptive Note:

CONFERENCE PROCEEDINGS

Corporate Author:

HUMBOLDT-UNIVERSITY BERLIN (GERMANY) DEPT OF PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

Illumination of a double p - Al0.5Ga0.5AsGaAsAl0.5Ga0.5As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a framework of the model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE