Large Increase of Electron Mobility in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well with an Inserted Thin AlAs Barrier
SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)
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The electron polar optical PO phonon scattering mechanisms which determine the electron mobility in a Al0.25Ga0.75 AsGaAsAl0.25 Ga0.75. As quantum well QW with an inserted thin AlAs barrier are considered. It is shown that the decrease of the second subband electron scattering by PO-phonon emission is responsible for the large increase of the mobility in the QW with the inserted barrier.
- Electricity and Magnetism
- Solid State Physics