Accession Number:

ADP013276

Title:

Large Increase of Electron Mobility in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well with an Inserted Thin AlAs Barrier

Descriptive Note:

Conference proceedings

Corporate Author:

SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

The electron polar optical PO phonon scattering mechanisms which determine the electron mobility in a Al0.25Ga0.75 AsGaAsAl0.25 Ga0.75. As quantum well QW with an inserted thin AlAs barrier are considered. It is shown that the decrease of the second subband electron scattering by PO-phonon emission is responsible for the large increase of the mobility in the QW with the inserted barrier.

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE