Accession Number:

ADP013269

Title:

New Quantum Dot Transistor

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES MOSCOW CENTER OF MICRO AND NANOELECTRONICS

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Modulation doped N-AlGaAsGaAsInAsGaAsInAsGaAs heterosturtures with InAs-quantum dots in device channel have been grown and investigated. Their photoluminescence spectra and electrical transport properties both in low and high electric fields were studied. Using these structures modulation doped FETs have been fabricated and analyzed. It was demonstrated that the quantum dot FETs present the new type of the hot electron devices promising for high speed applications.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE