New Quantum Dot Transistor
RUSSIAN ACADEMY OF SCIENCES MOSCOW CENTER OF MICRO AND NANOELECTRONICS
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Modulation doped N-AlGaAsGaAsInAsGaAsInAsGaAs heterosturtures with InAs-quantum dots in device channel have been grown and investigated. Their photoluminescence spectra and electrical transport properties both in low and high electric fields were studied. Using these structures modulation doped FETs have been fabricated and analyzed. It was demonstrated that the quantum dot FETs present the new type of the hot electron devices promising for high speed applications.
- Electrical and Electronic Equipment
- Solid State Physics