Room-Temperature Operation of GaInAs/InP Based Ballistic Rectifiers at Frequencies Up to 50 GHz
LUND UNIV (SWEDEN) DEPT OF SOLID STATEPHYSICS
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Ballistic rectifiers are realized in high-mobility GaInAsInP quantum well materials using electron beam lithography and wet chemical etching. The devices are made small enough to function even at room temperature. Furthermore, we demonstrate that the devices operate at frequencies at least up to 50 GHz.
- Electrical and Electronic Equipment
- Solid State Physics