Accession Number:

ADP013267

Title:

Nanostructure Effect in Si-MOSFETs

Descriptive Note:

Conference proceedings

Corporate Author:

CHALMERS UNIV OF TECHNOLOGY GOETEBORG (SWEDEN) DEPT OF PHYSICS

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

8.0

Abstract:

In this article we present a summary of the most important critical issues in nano-scaled field-effect transistors. The controversial issue of alloy scattering and the phenomenon of velocity overshoot which are important in the nano-scale regime are reviewed and discussed. The emerging Si1-xGex technology contribution to improve scaled Si MOSFETs is presented. Achievements and problems associated with channel engineering and alterative gate electrodes and high-k dielectric materials are also addressed. Finally during the presentation we will discuss our results on filtering out hot carriers using channel engineering. We will also discuss our results on scaling down the MOS transistor to a single electron tunneling MOS transistor made in Si and with properties like room temperature Coloumb oscillations.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE