Accession Number:

ADP013243

Title:

The New Approach to the Single-Electron Electrometer Design

Descriptive Note:

Conference proceedings

Corporate Author:

MOSCOW STATE UNIV (RUSSIA) LABORATORY OF CRYOELECTRONICS

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

We report on new two types of single electron tunneling SET transistor elecnometer. Both trlansistor types comprised two chains of tunnel junctions instead of two single junctions. In the first case Type I the role ofjunctions plays the shadow evaporated chains of stack tunnel AlAlOxAl junctions with an island in benveen. In the second case Type II there were two highly resistive Cr thin film strips about 1 micromater long connecting a 1 micromaeter long Al island to two Al outer electrodes. Our transistor demonstrated very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wvide ranges of bias currents I and gate voltages Vg. In the Coulomb blockade region V or about 0.5 mV we observed strong suppression of cotunneling current enabling to measure appreciable modulation curves V Vg at current I as low as 100 fA Type II transistor. The noise figure of our SET transistors was found to be similar to that of typical AlAlOxAl SET transistors. viz. deltaQx approx. A 3.55 x 10exp-4e sq.rt.Hz at 10 Hz.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE