Accession Number:

ADP013242

Title:

Resonant Tunnelling via States of the X-Related Donors Located at Different Atomic Layer in AlAs Barrier

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES CHERNOGOLOVKA INST OF MICROELECTRONICS AND HIGH PURITY MATERIALS

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

We report an electrical transport and magnetotransport study of GaAsAlAs GaAs single- barrier heterostructures incorporating unintentional donors in the barrier. Resonant tunneling was observed both through the quasiconfined states in the AlAs layer originated from the Xxy and Xz conduction band minima and through two distinct states of the donors bound to the Xxy and Xz valleys. Furthermore we observed an additional oscillatory like fine structure of the donor resonances that we attribute to difference in binding energies of donors located at different position of the AlAs layer. Magnetic field behaviour of the fine structure demonstrated that the binding energy of X-related donors has an essential dependence on both magnetic field and donor position in the barrier.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE