Accession Number:

ADP013230

Title:

Properties of InP Self-Assembled Quantum Dots Embedded in In0.49(Al(x)Ga(1-x))0.51P Grown by Metalorganic Chemical Vapor Deposition

Descriptive Note:

Conference proceedings

Corporate Author:

TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Report Date:

2001-06-01

Pagination or Media Count:

2.0

Abstract:

III-Phosphide self-assembled quantum dot SAQD or simply QD structures offer the potential to realize injection lasers operating in the visible spectral region with improved performance characteristics such as low threshold current density high charactenstic temperature and high differential gain. Also SAQD growth can overcome the limitation of lattice matching between the substrate and the epitaxial active region due to the inflinsic nature of the growth mode i.e. strain-induced S-K growth.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE