Optical and Transport Properties of Short Period InAs/GaAs Superlattices
MOSCOW STATE UNIV (RUSSIA) DEPT OF LOWTEMPERATURE PHYSICS
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The photoluminescence magnetoresistance Shubnikov-de Haas and Hall effect have been investigated in modulation doped short period InAsGaAs superlattices as a function of InAs layer thickness Q in the range 0.33 Q 2.7 monolayer ML. Large photoluminescence enhancement takes place when InAs layer thickness Q 0.33 ML. When Q 2,7 ML the quantum dots are formed. The anisotropy of resistivity and mobility of electrons depends not monotonically on the thickness Q of InAs layers.
- Electrooptical and Optoelectronic Devices
- Solid State Physics