Accession Number:

ADP013225

Title:

Optical and Transport Properties of Short Period InAs/GaAs Superlattices

Descriptive Note:

Conference proceedings

Corporate Author:

MOSCOW STATE UNIV (RUSSIA) DEPT OF LOWTEMPERATURE PHYSICS

Personal Author(s):

• Kulbachinskii, V. A.
• Lunin, R. A.
• Golikov, A. V.
• Rogozin, V. A.
• Mokerov, V. G.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

The photoluminescence magnetoresistance Shubnikov-de Haas and Hall effect have been investigated in modulation doped short period InAsGaAs superlattices as a function of InAs layer thickness Q in the range 0.33 Q 2.7 monolayer ML. Large photoluminescence enhancement takes place when InAs layer thickness Q 0.33 ML. When Q 2,7 ML the quantum dots are formed. The anisotropy of resistivity and mobility of electrons depends not monotonically on the thickness Q of InAs layers.

Descriptors:

• *PHOTOLUMINESCENCE
• *SUPERLATTICES
• HALL EFFECT
• GALLIUM ARSENIDES
• TRANSPORT PROPERTIES
• ANISOTROPY
• RUSSIA
• MAGNETORESISTANCE
• QUANTUM DOTS
• INDIUM ARSENIDES

Subject Categories:

• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE