Linearly-Polarized Photoluminescence from Type II ZnSe/BeTe Quantum Wells with Atomically-Flat Interfaces
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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This paper reports on improvements in the MBE growth of ZnSeBeTe QW heterostructures with ZnTe-like interfaces resulting in observation of two narrow oppositely polarized PL peaks. The peaks are attributed to recombination of holes localized by mono-layer fluctuations of the BeTe QW thickness with electrons from either left or right ZnSe layer. This interpretation is in qualitative agreement with the estimation of the carries conflnement energies performed within the effective mass approximation for a monomolecular QW thickness fluctuation as well as with the symmerty analysis of the QW interlace bonds. On the other hand accurate quantitative description of the energy splitting between the peaks and their degree of linear polarization require additional studies.
- Solid State Physics
- Electrooptical and Optoelectronic Devices