Accession Number:

ADP013215

Title:

Resonant gamma-X-Transfer in GaAs/AlAs Quantum-Well Structures

Descriptive Note:

Conference proceedings

Corporate Author:

BAYREUTH UNIV (GERMANY) PHYSIKALISCHESINST

Personal Author(s):

• Schmidt, S. R.
• Seilmeier, A.
• Zibik, E. A.
• Vorobjev, L. E.
• Zhukov, A. E.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

We investigate the Gamma2-Xz1 intersubband dynamics in GaAsAlAs quantum-well structures by time-resolved infrared pump and probe experiments. In the studied structure, the second Gamma-level in GaAs is nearly resonant to the first Xz--level in AlAs. We observe a biexponential decay of the bleaching signal with a fast time constant in the order of 1 ps and a second slower time constant of about 7 ps at 10 K and 4 ps at 300 K, respectively. The long term decay represents the Xz--Gamma2 transfer by elastic Gamma-X scattering at low temperatures. At 300 K electron-LO-phonon-scattering accelerates the Gamma-X transfer.

Descriptors:

• *QUANTUM WELLS
• *INFRARED DETECTORS
• LOW TEMPERATURE
• GALLIUM ARSENIDES
• GERMANY
• ALUMINUM ARSENIDES
• PHOTODETECTORS
• INFRARED SPECTRA
• OPTICAL PUMPING
• MOLECULAR BEAM EPITAXY

Subject Categories:

• Solid State Physics
• Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE