Accession Number:

ADP013210

Title:

Vibration Study of Nitrogen Incorporation in InGaAsN Alloys

Descriptive Note:

Conference proceedings Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

We present an infrared IR reflectivity and Raman study of Inx Ga1-xAs1-yNy x 0 and 0.08, y 0.03 alloys grown by molecular beam epitaxy. We observed strong diagonal Raman components of GaAs-type phonons indicating a local trigonal distortion of the alloy lattice induced by nitrogen ordering indium induced splitting of the Ga-N type vibration indicating a formation of different local nitrogen atomic arrangements a sharp halfwidth1 cm-1 IR mode at 360 cm-1, of unknown origin.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE