Accession Number:
ADP013210
Title:
Vibration Study of Nitrogen Incorporation in InGaAsN Alloys
Descriptive Note:
Conference proceedings Conference proceedings
Corporate Author:
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Personal Author(s):
Report Date:
2001-06-01
Pagination or Media Count:
4.0
Abstract:
We present an infrared IR reflectivity and Raman study of Inx Ga1-xAs1-yNy x 0 and 0.08, y 0.03 alloys grown by molecular beam epitaxy. We observed strong diagonal Raman components of GaAs-type phonons indicating a local trigonal distortion of the alloy lattice induced by nitrogen ordering indium induced splitting of the Ga-N type vibration indicating a formation of different local nitrogen atomic arrangements a sharp halfwidth1 cm-1 IR mode at 360 cm-1, of unknown origin.
Descriptors:
Subject Categories:
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics
- Lasers and Masers