Accession Number:

ADP013208

Title:

Computational and Experimental Studies on Strain Induced Effects in InGaAs/GaAs HFET Structure Using C-V Profiling

Descriptive Note:

Conference proceedings

Corporate Author:

SAINT PETERSBURG STATE ELECTROTECHNICALUNIV (RUSSIA) DEPT OF RADIOENGINEERING AND ELECTRONICS

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

We analyze strain induced effects on the capacitance-voltage C-V profile for MBE grown GaAsIn0.1Ga0.9AsGaAs HFET structure. The calculations of C-V profile were made using a small-signal approach developed for the quantum well QW structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE