Accession Number:

ADP013208

Title:

Computational and Experimental Studies on Strain Induced Effects in InGaAs/GaAs HFET Structure Using C-V Profiling

Descriptive Note:

Conference proceedings

Corporate Author:

SAINT PETERSBURG STATE ELECTROTECHNICALUNIV (RUSSIA) DEPT OF RADIOENGINEERING AND ELECTRONICS

Personal Author(s):

• Kokorev, M. F.
• Maleev, N. A.
• Pakhnin, D. V.
• Zhukov, A. E.
• Ustinov, V. M.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

We analyze strain induced effects on the capacitance-voltage C-V profile for MBE grown GaAsIn0.1Ga0.9AsGaAs HFET structure. The calculations of C-V profile were made using a small-signal approach developed for the quantum well QW structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *ELECTRICAL PROPERTIES
• EXPERIMENTAL DATA
• QUANTUM WELLS
• GALLIUM ARSENIDES
• HETEROJUNCTIONS
• NUMERICAL ANALYSIS
• VOLTAGE
• RUSSIA
• CAPACITANCE

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE