Computational and Experimental Studies on Strain Induced Effects in InGaAs/GaAs HFET Structure Using C-V Profiling
SAINT PETERSBURG STATE ELECTROTECHNICALUNIV (RUSSIA) DEPT OF RADIOENGINEERING AND ELECTRONICS
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We analyze strain induced effects on the capacitance-voltage C-V profile for MBE grown GaAsIn0.1Ga0.9AsGaAs HFET structure. The calculations of C-V profile were made using a small-signal approach developed for the quantum well QW structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile.
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