Accession Number:

ADP013205

Title:

Stoichiometry and Atomic Concentration Depth Profiles in InAs/Si Quantum Dot Systems by Rutherford Backscattering Spectroscopy and Secondary Ion Mass Spectroscopy

Descriptive Note:

Conference proceedings

Corporate Author:

AUGSBURG UNIV (GERMANY)

Personal Author(s):

• Karl, H.
• Wenzel, A.
• Stritzker, B.
• Claessen, R.
• Strocov, V. N.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Stoichiometry and atomic concentration distributions for MBE grown systems of InAs quantum dots buried in a Si matrix has been studied using Rutherford Backscattering spectroscopy and Secondary Ion Mass Spectroscopy depth profiling. We have found a significant excess of As atoms which under elevated temperatures diffuse into the Si matrix despite of a larger ionic radius. This may affect the band alignment on the QD, matrix interface. Our findings suggest improvements office MBE growth process for InAsSi and similar systems.

Descriptors:

• *MASS SPECTROSCOPY
• *QUANTUM DOTS
• MATRIX MATERIALS
• BACKSCATTERING
• SILICON
• GERMANY
• STOICHIOMETRY
• MOLECULAR BEAM EPITAXY
• INDIUM ARSENIDES

Subject Categories:

• Atomic and Molecular Physics and Spectroscopy
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE