Magneto-Tunnelling Spectroscopy of Localised and Extended States in a Quantum Well Containing Quantum Dots
RUSSIAN ACADEMY OF SCIENCES CHERNOGOLOVKA (RUSSIA) INST OF MICROELECTRONICS TECHNOLOGY
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We investigate resonant tunneling in GaAsAlGaAs double-barrier resonant-tunneling diodes RTDs in which a single layer of InAs self-assembled quantum dots SAQDs is embedded in the center of the GaAs quantum well. The dots provide a well-defined and controllable source of disorder in the well and we use resonant tunneling for studying the effect of disorder on the electronic properties of the well.
- Solid State Physics
- Electrical and Electronic Equipment