Accession Number:

ADP013200

Title:

Electrostatic Force Microscopy Study of the Electric Field Distribution in Semiconductor Laser Diodes Under Applied Biases

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

In conclusion we present a new and direct electrostatic force microscopy method to resolve the electric field and capacitance distributions in laser diodes. Using this method we have investigated the fine structure of the electric field in AlGaAsGaAs and InGaPGaAs p-i-n based laser diodes under forward and backward biases. We have also found a strong increase in the capacftance at the waveguide under forward biases. We believe that this effect is related to the carriers injection into the waveguide and can be used to study the injected carriers distribution.

Subject Categories:

  • Solid State Physics
  • Electricity and Magnetism
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE