Accession Number:

ADP013199

Title:

Electrostatic Force Microscopy, Principles and Applications to Semiconductor Materials and Devices

Descriptive Note:

Conference proceedings

Corporate Author:

MONTPELLIER-2 UNIV (FRANCE)

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

We have shown the principles on which is based the Electrostatic Force Microscopy and the expected peffomances. Basing on experimental data we have seen how to interpret the contrasts observed in the experiments. Then we have shown typical observations on semiconductors. We can say that the EFM is now an established method to explore local properties of semiconductor materials structures and devices but the field can be widened by new developments.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE