Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes
HEINRICH-HERTZ-INST FUER NACHRICHTENTECHNIK BERLIN G M B H (GERMANY F R)
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The present status of basic development steps towards AlGaAs GaAs microcavity devices emitting at 1.3 micrometers is presented. An emission wavelength of the active medium of 1.3 micrometer was achieved by the implementation of self-organized InAs GaInAs quantum dots. To match the wavelength tight control of the microcavity parameters was ensured by an improved layer thickness calibration procedure. Incorporation of a reverse-biased Si Be-doped GaAs tunnel junction with record low junction resistance is expected to improve the lateral carrier distribution for intra-cavity contacted devices.
- Electrooptical and Optoelectronic Devices
- Solid State Physics