Accession Number:

ADP013187

Title:

Modeling of Band Offsets in GaN Based Heterostructures

Descriptive Note:

Conference proceedings

Corporate Author:

TECHNICAL UNIV OF ISTANBUL (TURKEY)

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

We present a tight binding modeling of the band offsets of GaN based heterostructures. The model considers the nonorthogonality of the sp3 set of orbitals of adjacent atoms and spin-orbit coupling and uses the Hartre-Fock atomic energies and interacting matrix element obtained by fitting existing band structures for bulk materials to determine the valence band energies at 0 K and I Bar, which are screened by the optical dielectric constants of bulk materials at any temperature, pressure, strain, and composition. The model compares very well with experiment for the valence and conduction band offsets of GaN based and many other heterostructures.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE