Dissimilarity Between Cleaved Edge and Surface Regions of GaN (0001) Epitaxial Layers Studied by Spatially-Resolved Photoluminescence and Reflectivity
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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Polarized photoluminescence and reflectance spectroscopy with high spatial resolution are employed to show the different optical properties of cleaved edges with respect to internal regions of thick GaN epitaxial layers. The values of spin-orbft and crystal-field parameters are determined separately for these areas. The obtained data indicate that an absorption edge of the material within the cleaved edge regions is below the energy of emission from internal regions which can be disadvantageous for the operation of edge-emitting devices such as LED and lasers.
- Electrooptical and Optoelectronic Devices
- Solid State Physics