Accession Number:

ADP013186

Title:

Dissimilarity Between Cleaved Edge and Surface Regions of GaN (0001) Epitaxial Layers Studied by Spatially-Resolved Photoluminescence and Reflectivity

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Polarized photoluminescence and reflectance spectroscopy with high spatial resolution are employed to show the different optical properties of cleaved edges with respect to internal regions of thick GaN epitaxial layers. The values of spin-orbft and crystal-field parameters are determined separately for these areas. The obtained data indicate that an absorption edge of the material within the cleaved edge regions is below the energy of emission from internal regions which can be disadvantageous for the operation of edge-emitting devices such as LED and lasers.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE