Correlation of Mosaic Structure Peculiarities with Electric Characteristics and Surface Multifractal Parameters for GaN Epitaxial Layers
AKADEMIYA NAUK SSSR MOSCOW INST METALLURGII
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The first successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities which are typical of GaN epitaxial layer with hexagonal modification grown on 0001 sapphire substrates have been obtained. Characteristic size of the mosaic structure has been measured to be 200-800 nm. The direct dependence of mobility on the multifractal parameters the Renyi dimension and the degree of the order index of the surface topology of the mosaic structure has been observed for all GaN layers investigated.