Planetary Production Type MOCVD Reactors for Blue Laser Applications in the GaTnN Material System
AIXTRON AG AACHEN (GERMANY)
Pagination or Media Count:
Growth parameters for the growth of heterostructures in the GaNGaInN material system are sttidied through numerical simulation of thermal, fluiid dynamical and kinetical behavior of the AIX 2000 G3 HT planetary R reactor. Good on wafer, wafer to wafer and ruin to run uniformity over the whole spectral range are demonstrated. Lasing at wavelengths up to 470 nm of such structures is achieved by optical pumping at 300 K, proving high optical quality of the obtained layers and good control of the formation of quantum dot or disk like organization of In-rich clusters in the QW material.
- Lasers and Masers