Accession Number:

ADP013177

Title:

Time Constant of Far IR Response of Quantum Hall Device

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

The characteristic time of far IR response of quantum Hall effect detector in GaAAlGaAs has been investigated versus the magnetic field. The response time is shown to increase dramatically with the field due to the spatial separation of photoexcited electrons and holes captured by localized states formed by the disordered potential.

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE