Time Constant of Far IR Response of Quantum Hall Device
RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES
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The characteristic time of far IR response of quantum Hall effect detector in GaAAlGaAs has been investigated versus the magnetic field. The response time is shown to increase dramatically with the field due to the spatial separation of photoexcited electrons and holes captured by localized states formed by the disordered potential.
- Infrared Detection and Detectors
- Solid State Physics