Accession Number:

ADP013173

Title:

Impurity Potential Fluctuations for Selectively Doped p-Ge/Ge1 xSix Heterostructures in the Quantum Hall Regime

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SVERDLOVSKINST OF METAL PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Two models for random impurity potential the model with randomly distributed charged centers located within a layer and the model of the system with spacer are used for the estimation of the impurity potential flucatiation parameters values random potential amplitude the nonlinear screening length in vicinity of integer filling factors nu I and nu 2 the background density of state DOS. The described models are suitable for the explanation of unusual high value of DOS at nu 1 and nu 2 in conuast to short-range impurity potential models.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE