Accession Number:

ADP013171

Title:

Thin Epitaxial Al and Cu Films Grown on CaF2/Si(111)

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Molecular beam epitaxy was used to grow single crystal CaF2 Al and Cu films on Si111. Reflection high energy electron diffraction indicated that Al film was epitaxial when it was grown on CaF2Si, and that epitaxial Cu film can be grown on AlCaF2Si heteroepitaxial substrates. Room tenmperature measurements of resistivity of Al films 10 to 300 nm thick agree with the Fuchs-Sondheimer model in which only diffuse scattering of conduction electrons occurs at the film interfaces. For 50 to 1000 nm thick Cu films the resistivity size effect is greater than the prediction of this model.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE