Accession Number:

ADP013169

Title:

Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

InGaAsN insertions in a GaAs matrix grown by molecular beam epitaxy MBE demonstrate a pronounced effect of phase separation even at relatively low indium and nitrogen concentrations. Cross-section high-resolution transmission electron microscopy TEM images processed using a specially developed software demonstrated an effect of nitrogen decomnon of InAs-rich regions in the structures studied. Formation of ordered structures of compositional domains has been revealed in plan-view TEM images.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE