Accession Number:
ADP013169
Title:
Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE
Descriptive Note:
Conference proceedings
Corporate Author:
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Personal Author(s):
Report Date:
2001-06-01
Pagination or Media Count:
4.0
Abstract:
InGaAsN insertions in a GaAs matrix grown by molecular beam epitaxy MBE demonstrate a pronounced effect of phase separation even at relatively low indium and nitrogen concentrations. Cross-section high-resolution transmission electron microscopy TEM images processed using a specially developed software demonstrated an effect of nitrogen decomnon of InAs-rich regions in the structures studied. Formation of ordered structures of compositional domains has been revealed in plan-view TEM images.
Descriptors:
Subject Categories:
- Crystallography
- Solid State Physics