A Technique for Fabricating InGaAs/GaAs Nanotubes of Precisely Controlled Length
RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS
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Single-crystal nanotubes of precisely controlled length were produced on a 110 cleaved facet of heterostruture. The selective MBE growth of a strained InGaAsGaAs snip and its subsequent self-rolling were used. The proposed technique is capable of ensuring good reproducibility of all sizes and exact positioning of nanotubes.
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