Accession Number:

ADP013167

Title:

A Technique for Fabricating InGaAs/GaAs Nanotubes of Precisely Controlled Length

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Single-crystal nanotubes of precisely controlled length were produced on a 110 cleaved facet of heterostruture. The selective MBE growth of a strained InGaAsGaAs snip and its subsequent self-rolling were used. The proposed technique is capable of ensuring good reproducibility of all sizes and exact positioning of nanotubes.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE