Accession Number:

ADP013166

Title:

Thermodynamic Analysis of MBE Growth of Quarternary InGaAsN Compounds

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

LNGaAsN has recently been proposed as a novel material for near-infrared lasers. The merits of this material are due to the strong bowing in the bandgap of the GaAs-GaN alloy system which offers the extension of the light emission range from GaAs-based structures to 1.3 micrometers and longer. At the same time the band-offsets between InGaAsN and GaAs are larger than in the conventionally used InGaAsP system which should greatly improve high temperature performance of the 1.3 micrometer lasers. The combination with the presently available GaAsAlAs distributed Bragg reflector DBR technology could also lead to novel vertical cavity lasers for the long wavelength region.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE