Accession Number:

ADP013164

Title:

Indium Distribution in Pseudomorphic InGaAs/(Al)GaAs Quantum Wells Grown by MOCVD

Descriptive Note:

Conference proceedings

Corporate Author:

SIGM PLUS MOSCOW (RUSSIA)

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Indium atom distribution in InGaAsAlGaAs quantum wells QWs grown by metal organic chemical vapor deposition MOCVD was systematically studied. High resolution grazing sputter angle Auger electron spectroscopy was used as a method of indium depth profile investigation. Broadening and shift to the surface ofindium concentration profile in single QW the increase of indium content in upper quantum well for close spaced QWs were found. It was observed that the use of AlGaAs barriers between QWs reduces indium surface segregation.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE