Accession Number:

ADP013162

Title:

MBE Growth of High Quality GaAsN Bulk Layers

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

In the present work we have carefully optimized the operation of plasma source and the growth parameters of GaAsN layers. We have demonstrated the possibility of incorporation about 1.5 of N into GaAs without decreasing the photoluminescence intensity.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE