Accession Number:

ADP013160

Title:

Surface Segregation in Epitaxy of III-V Compounds

Descriptive Note:

Conference proceedings

Corporate Author:

SOFT-IMPACT LTD SAINT PETERSBURG (RUSSIA)

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Surface segregation in III-V compound heterostrucures grown by Molecular Beam Epitaxy MBE and Metal-Organic Vapor Phase Epitaxy MOVPE is studied theorencally. The suggested model treats segregation as a transient process resulting in a delayed highly-volatile species incorporation into the crystal accompanied by its accumulation on the growth surface. Specific features of In segregation in InGaAs and InGaN are discussed with respect to control of the composition profile and efficiency of In incorporation into the crystal.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE