Accession Number:

ADP013157

Title:

Effect of Growth Conditions on Optical Properties of Ge Submonolayer Nanoinclusions in a Si Matrix Grown by Molecular Beam Epitaxy

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Personal Author(s):

• Cirlin, G. E.
• Egorov, V. A.
• Volovik, B. V.
• Tsatsul'nikov, A. F.
• Ustinov, V. M.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Optical properties of the Ge submonolayer SML nanoinclusions in a Si matrix grown by moleeular beam epitaxy MBE are investigated. It is shown that at relatively high growth temperatures 600 C there are new features which appear in a PL spectra. These features correspond to formation of the germanium nanoobjeets in a silicon media.

Descriptors:

• *PHOTOLUMINESCENCE
• *NANOSTRUCTURES
• OPTICAL PROPERTIES
• MATRIX MATERIALS
• SUBSTRATES
• SILICON
• RUSSIA
• GERMANIUM
• MOLECULAR BEAM EPITAXY

Subject Categories:

• Solid State Physics
• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE