Accession Number:

ADP013156

Title:

Schwoebel Barrires as the Reason for 3D-Island Formation During Heteroepitaxy

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

Self-assembled 3D-islands formation during heteroepitaxial growth was investigated by Monte Carlo simulation. Shwoebel barriers for explanation of 3D growth kinetic were suggested. Island size equalization dunng growth process was observed. Necessity of atomic flux from island edge to the upper layers for 3D island formation was demonstrated.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE