Accession Number:
ADP013155
Title:
Pulsed Ion-Beam Synthesis of beta-FeSi2 Layers on Si Implanted by Fe+ Ions
Descriptive Note:
Conference proceedings
Corporate Author:
RUSSIAN ACADEMY OF SCIENCES KAZAN PHYSICAL TECHNICAL INST
Personal Author(s):
Report Date:
2001-06-01
Pagination or Media Count:
4.0
Abstract:
Synthesis of beta-FeSi2 layers on Si was performed by high-dose Fe implantation in Si at 300 K with subsequent pulsed ion treatment PIT on implanted layers by powerful ion beams PIB of nanosecond duration. It was shown that the layer consists of the grains presipitates beta--FeSi2 with size approximately 30-40 nm. The results of the optical absorption indicate the formation of direct-band gap structures with an optical gap Eg about 0.82-0.83 eV. It is shown that the pulsed ion-beam synthesized sample is able to emit at the lambda about 1.56 micrometersd up to temperature of 210 K.
Descriptors:
Subject Categories:
- Solid State Physics
- Electrooptical and Optoelectronic Devices