Accession Number:

ADP013155

Title:

Pulsed Ion-Beam Synthesis of beta-FeSi2 Layers on Si Implanted by Fe+ Ions

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES KAZAN PHYSICAL TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Synthesis of beta-FeSi2 layers on Si was performed by high-dose Fe implantation in Si at 300 K with subsequent pulsed ion treatment PIT on implanted layers by powerful ion beams PIB of nanosecond duration. It was shown that the layer consists of the grains presipitates beta--FeSi2 with size approximately 30-40 nm. The results of the optical absorption indicate the formation of direct-band gap structures with an optical gap Eg about 0.82-0.83 eV. It is shown that the pulsed ion-beam synthesized sample is able to emit at the lambda about 1.56 micrometersd up to temperature of 210 K.

Subject Categories:

  • Solid State Physics
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE