Accession Number:

ADP013154

Title:

Epitaxial Stabilization of a-PbO2 Structure in MnF2 Layers on Si and GaP

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Epitaxial MnF2 films as thick as 350 nm have been grown on Si and GaP substrates. X-ray diffractometry revealed that the MnF2 films have the alpha-PbO2 type orthorhombic structure with the lattice parameters a 0.4953 nm b 0.5798 nm c 0.5362 nm. It was found that the films grown on Si111 have 111Si21-BAR1-BARMnF2 and 21-BAR1-BARSi 21-BAR1-BARMnF2 onentations. These epitaxial relations agree with three crystallite orientations observed by AFM. Manganese fluoride films grown on SiOO1 had the same orthorhombic structure however 010MnF2 or 1OOmnF2 were directed along the surface normal depending on the surface morophology of the buffer layer. Optical and magnetic measurements of the MnF2 layers are underway.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE