Accession Number:

ADP013150

Title:

Evolution of RHEED Intensity in the Simulated Homoepitaxial Growth of GaAs(OOl)

Descriptive Note:

Conference proceedings

Corporate Author:

OSAKA UNIV (JAPAN) DEPT OF PHYSICS

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

The influence of surface reconstruction on the homoepitaxial growth of GaAs 100 has been studied by the Monte Carlo simulations. In the model both Ga and As species are deposited onto a GaAs 001 - beta22x4 reconstructed surface simultaneously at T about 580 C as this corresponds to the ordinary growth condition of molecular beam epitaxy. The growth mechanism of the beta22 x 4 structure has been identified also studied are the step-flow growth modes on vicinal surfaces of various misorientations.

Subject Categories:

  • Solid State Physics
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE