Accession Number:

ADP013135

Title:

Current Instability and Shot Noise in Nanometric Semiconductor Heterostructures

Descriptive Note:

Conference proceedings

Corporate Author:

SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)

Personal Author(s):

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

We investigate electron transport and shot noise in single barrier GaAsAlGaAs heterostructure of nanometric sizes. The coupling between space charge and the dependence of the transmission coefficient on energy is found to provide the positive feedback which enhances shot noise and ultimately leads to a current instability of S-type. Theoretical results are in qualitative agreement with existing experiments and confirm recent Monte Carlo simulations evidencing shot-noise enhancement in GaAsAlGaAs heterostructures.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE