Accession Number:

ADP013129

Title:

Resonant Tunneling Diodes Based on Stacked Self-Assembled Ge/Si Islands

Descriptive Note:

Conference proceedings

Corporate Author:

MAX-PLANCK-INST FUER FESTKOERPERFORSCHUNG STUTTGART (GERMANY F R)

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

We present a new concept and first results of resonant tunneling diodes based on self assembled GeSi islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current voltage I-V curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole lh transition. The lh resonance is pronounced and negative differential resistance is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE