Size Quantization and Excited States of Associated and Isolated InAs Quantum Dots
SAINT PETERSBURG STATE UNIV (RUSSIA) INST OF PHYSICS
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Spectra of photoluminescence PL including its decay time spectra and spectra of PL excitation PLE of heteroepitaxial structures with quantum dots QD InAsGaAs have been studied. Structures had been grown by submonolayer migration-enhanced epitaxy SMEE mode on vicinal substrates GaAs at deposited InAs thickness close to critical 1.8 monolayer ML. It has been shown that PL structure under study is formed by the recombination emission of different QD families. One family consists of associated QD groups confined by vicinal terraces discretely broadened due to step bunching effect, another family of isolated QD separated from rest QD array due to wetting layer WL ruptures at terrace edges. Excited exciton states of various QD groups have been detected. Their particular features are determined depending on the temperature, power and wavelength of photoexcitation.
- Solid State Physics