Accession Number:

ADP013115

Title:

Charge Separation in Scrolled Heterostructures

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Personal Author(s):

• Osadchii, V. M.
• Prinz, V. Ya.

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

We calculate strains in the wall of semiconductor InAsGaAs nanotube and their effects on the band edges. We show that the maxima of the electron and hole wave functions are shifted in opposite directions from the middle of the tube wall.

Descriptors:

• *NANOSTRUCTURES
• GALLIUM ARSENIDES
• WALLS
• HETEROGENEITY
• RUSSIA
• MOLECULAR BEAM EPITAXY
• INDIUM ARSENIDES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE