Accession Number:

ADP013111

Title:

Photoelectronic Properties of InAs/GaAs Nanostructures With Combined Quantum Well and Quantum Dot Layers Grown by Metal-Organic Vapor Phase Epitaxy

Descriptive Note:

Conference proceedings

Corporate Author:

UNIVERSITY OF NIZHNI NOVGOROD (RUSSIA)

Report Date:

2000-06-23

Pagination or Media Count:

3.0

Abstract:

Combination of quantum well QW and QD layers in the GaAsInx GA-xAS nanostructures obtained by MOVPE result not only in well known red shift of the QD PL spectrum but also to splitting of the PL spectrum and of the photosensitivity spectrum of the QW. Red shift of one of these spectral features relative to the other is explained by diffusion of In from the QDs to the QW at their heterointerface.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE