1.3 Micrometers Photoluminescence Emission from InAs/GaAs Quantum Dots Multilayer Structures
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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Optical properties of multilayer structures with quantum dots InAs on GaAs are investigated. It is shown that under optimal growth conditions the 1.3 micrometers emission could be achieved. Possible scenarios Of quantum dots behaviour evaluation is discussed in a frame of elastic theory to explain differences in optical properties of the grown structures.
- Solid State Physics
- Electrooptical and Optoelectronic Devices