Accession Number:

ADP013108

Title:

1.3 Micrometers Photoluminescence Emission from InAs/GaAs Quantum Dots Multilayer Structures

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Optical properties of multilayer structures with quantum dots InAs on GaAs are investigated. It is shown that under optimal growth conditions the 1.3 micrometers emission could be achieved. Possible scenarios Of quantum dots behaviour evaluation is discussed in a frame of elastic theory to explain differences in optical properties of the grown structures.

Subject Categories:

  • Solid State Physics
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE