Accession Number:

ADP013101

Title:

Comparison of Hole and Electron Emission from InAs Quantum Dots

Descriptive Note:

Conference proceedings

Corporate Author:

TECHNISCHE UNIV BERLIN (GERMANY F R)

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Carrier escape processes from self-organized InAs quantum dots QDs embedded in GaAs are investigated by time-resolved capacitance spectroscopy. Electron emission is found to be dominated by tunneling processes. In addition to tunneling from the ground state, we find thermally activated tunneling involving excited QD states with an activation energy of 82 meV. For boles, the tunnel contribution is negligible and thermal activation from the QD ground state to the GaAs valence band with an activation energy of 164 meV dominates. Extrapolation to room temperature yields an emission time constant of 5 ps for holes, which is an order of magnitude larger than for electrons. The measured activation energies agree well with theoretically predicted QD levels.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE