Accession Number:

ADP013098

Title:

Properties of InAs Quantum Dots on Silicon(001) and (111)

Descriptive Note:

Conference proceedings

Corporate Author:

WUERZBURG UNIV (GERMANY F R) PHYSIKALISCHES INST

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

The self assembled formation of InAs Quantum Dots QDs on silicon has been studied by RHEED, AFM, Raman and TEM. On Si001 up to 10exp11cm-2 InAs QDs can either be grown in a conventional growth mode, or by utilizing a postgrowth dewetting transition at decreasing substrate temperatures. On Si 111 instead, QDs only form on an As-passivated surface. Otherwise InAs grows in large 2D clusters.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE