Properties of InAs Quantum Dots on Silicon(001) and (111)
WUERZBURG UNIV (GERMANY F R) PHYSIKALISCHES INST
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The self assembled formation of InAs Quantum Dots QDs on silicon has been studied by RHEED, AFM, Raman and TEM. On Si001 up to 10exp11cm-2 InAs QDs can either be grown in a conventional growth mode, or by utilizing a postgrowth dewetting transition at decreasing substrate temperatures. On Si 111 instead, QDs only form on an As-passivated surface. Otherwise InAs grows in large 2D clusters.
- Solid State Physics