Control of Photocurrent Relaxation in GaAs/AlGaAs Nanostructures
RUSSIAN ACADEMY OF SCIENCES MOSCOW (RUSSIA) LEBEDEV INST
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Strong influence of an interband carrier generation on deep states relaxation in GaAsAlGaAs nanostructures has been found. Considerable variation of relaxation time, sign and amplitude of impurity photoconductivity PC signal has been detected at rather low interband excitation. In single quantum well structures the additional interband excitation results in strong more, than 10exp3 times decrease of a deep states relaxation time. In modulation doped GaAs struc- tures the interband generation results in long-time negative photoconductivity signal with decay time controlled by the interband generation intensity. The effect may be used for the analysis of deep states distribution in GaAsAlGaAs nanostructures.
- Atomic and Molecular Physics and Spectroscopy