Optical Properties and Structure of Si/InAs/Si Layers Grown by MBE on Si Substrate
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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Epitaxial SiInAsSi heterostructure grown on 001 Si substrate by molecular beam epitaxy MBE and annealed at 8OO degrees C was investigated by High Resolution Transmission Electron Microscopy HRTEM. Extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of 6mm, which exhibit two kinds of ordering are observed. The ordering of InAs molecules has occurred. The sample show photoluminescence in the 1.3 micrometer region, which is tentatively attributed to the recombination of excitons localized in the ordered regions.
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics