Accession Number:

ADP013074

Title:

Time-Resolved Studies of Exciton Recombination in Direct-Gap GaAs/AlAs Superlattices

Descriptive Note:

Conference proceedings

Corporate Author:

UKRAINIAN ACADEMY OF SCIENCES KIEV INST OF SEMICONDUCTOR PHYSICS

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

The temperature dependence of the recombination dynamics of excitons was investigated by time-resolved photoluminescence spectroscopy in direct-gap GaAsAlAs superlattices. Peculiarities of excitonic photoluminescence decay were established in the dependence of the well width. In particular it was shown that a reduction of the well width results in faster exciton recombination due to an enhancement of interface influence.

Subject Categories:

  • Solid State Physics
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE