Accession Number:

ADP013073

Title:

Fluctuation-Trapped Exciton States in 2D-Semiconductor Solid Solutions

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Exciton localization in quantum wells formed by solid solutions has been studied both theoretically and experimentally. The method for calculation of the density of fluctuation states below the edge of two-dimensional exciton band and the spectral density of exciton transitions is developed. The classification of states in respect to its migration properties and contribution to the luminescence processes has been carried out using the continual percolation theory. The shape of emission and absorption bands, as well as the position of mobility edge are calculated. The results of calculations are in good agreement with the optical spectra of ZnCdSe- and GaInAs-based QW structures.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE